Integrated photodetector operating in the long-wave infrared spectral range

被引：0

作者：

Nguyen, Thi Hao Nhi ^{[1
]}

Koompai, Natnicha ^{[1
]}

Turpaud, Victor ^{[1
]}

Montesinos-Ballester, Miguel ^{[1
,3
]}

Frigerio, Jacopo ^{[2
]}

Calcaterra, Stefano ^{[2
]}

Ballabio, Andrea ^{[2
]}

Le Roux, Xavier ^{[1
]}

Coudevylle, Jean-Rene ^{[1
]}

Villebasse, Cedric ^{[1
]}

Bouville, David ^{[1
]}

Alonso-Ramos, Carlos ^{[1
]}

Vivien, Laurent ^{[1
]}

Isella, Giovanni ^{[1
]}

Marris-Morini, Delphine ^{[1
]}

机构：

[1] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France

[2] Politecn Milan, Dipartimento Fis, L NESS, Via Anzani 42, I-22100 Como, Italy

[3] Swiss Fed Inst Technol, Inst Quantum Elect, Zurich, Switzerland

来源：

2023 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2023年

关键词：

silicon; germanium; mid-infrared photodetector;

D O I：

10.1109/SIPHOTONICS55903.2023.10141904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon germanium waveguide-integrated photodetector operating in the long wave infrared spectral range, from 5 to 8 mu m wavelength is demonstrated for the first time. The device is based on a Schottky diode embedded on a graded silicon germaniumphotonics circuits.

引用

页数：2

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