Integrated photodetector operating in the long-wave infrared spectral range

被引:0
|
作者
Nguyen, Thi Hao Nhi [1 ]
Koompai, Natnicha [1 ]
Turpaud, Victor [1 ]
Montesinos-Ballester, Miguel [1 ,3 ]
Frigerio, Jacopo [2 ]
Calcaterra, Stefano [2 ]
Ballabio, Andrea [2 ]
Le Roux, Xavier [1 ]
Coudevylle, Jean-Rene [1 ]
Villebasse, Cedric [1 ]
Bouville, David [1 ]
Alonso-Ramos, Carlos [1 ]
Vivien, Laurent [1 ]
Isella, Giovanni [1 ]
Marris-Morini, Delphine [1 ]
机构
[1] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France
[2] Politecn Milan, Dipartimento Fis, L NESS, Via Anzani 42, I-22100 Como, Italy
[3] Swiss Fed Inst Technol, Inst Quantum Elect, Zurich, Switzerland
关键词
silicon; germanium; mid-infrared photodetector;
D O I
10.1109/SIPHOTONICS55903.2023.10141904
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A silicon germanium waveguide-integrated photodetector operating in the long wave infrared spectral range, from 5 to 8 mu m wavelength is demonstrated for the first time. The device is based on a Schottky diode embedded on a graded silicon germaniumphotonics circuits.
引用
收藏
页数:2
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