III-nitride nanowires for emissive display technology

被引：3

作者：

Vignesh, Veeramuthu ^{[1
]}

Wu, Yuanpeng ^{[2
]}

Kim, Sung-Un ^{[1
]}

Oh, Jeong-Kyun ^{[1
]}

Bagavath, Chandran ^{[1
]}

Um, Dae-Young ^{[1
]}

Mi, Zetian ^{[2
,3
]}

Ra, Yong-Ho ^{[1
,4
]}

机构：

[1] JeonbukNat Univ JBNU, Coll Engn, Res Ctr Adv Mat Dev RCAMD, Div Adv Mat Engn, Jeonju, South Korea

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI USA

[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[4] Jeonbuk Natl Univ JBNU, Coll Engn, Res Ctr Adv Mat Dev RCAMD, Div Adv Mat Engn, 567 Baekje Daero, Jeonju 54896, South Korea

来源：

JOURNAL OF INFORMATION DISPLAY | 2024年 / 25卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

mu-LED; full-color LED; InGaN nanowires; multi-quantum well (MQW); display technology; LIGHT-EMITTING-DIODES; INTERNAL QUANTUM EFFICIENCY; SELECTIVE-AREA GROWTH; VAPOR-PHASE EPITAXY; GAN NANOWIRES; PHOSPHOR-FREE; INGAN NANOWIRES; SEMICONDUCTOR NANOWIRES; OPTICAL-PROPERTIES; SINGLE-CHIP;

D O I：

10.1080/15980316.2023.2282937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The field of III-nitride (InGaN) nanowire micro light-emitting diode (mu -LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced mu -LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-mu -LED displays and possible solutions to address them.

引用

页码：13 / 59

页数：47

共 50 条

[1] III-Nitride Nanowires Lasers
Wang, George T.
Li, Changyi
Liu, Sheng
Wright, Jeremy B.
Leung, Benjamin
Koleske, Daniel D.
Figiel, Jeffrey J.
Luk, Ting S.
Brener, Igal
Balakrishnan, Ganesh
Brueck, Steven R. J.
2016 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM), 2016, : 25 - 26
[2] Group III-nitride nanowires
Bao, A.
MATERIALS SCIENCE AND TECHNOLOGY, 2017, 33 (07) : 765 - 776
[3] III-nitride nanowires: Growth, properties, and applications
Wang, George T.
Li, Qiming
Huang, Jianyu
Talin, A. Alec
Lin, Yong
Arslan, Ilke
Armstrong, Andrew
Upadhya, Prashanth C.
Prasankumar, Rohit P.
NANOEPITAXY: HOMO- AND HETEROGENEOUS SYNTHESIS, CHARACTERIZATION, AND DEVICE INTEGRATION OF NANOMATERIALS II, 2010, 7768
[4] Molecular Beam Epitaxy of III-Nitride Nanowires
Zhao, S.
Wang, Renjie
Chu, Sheng
Mi, Zetian
IEEE NANOTECHNOLOGY MAGAZINE, 2019, 13 (02) : 6 - 16
[5] III-Nitride Micro-LEDs for Efficient Emissive Displays
Wierer, Jonathan, Jr.
Tansu, Nelson
LASER & PHOTONICS REVIEWS, 2019, 13 (09)
[6] III-V and III-Nitride Nanowires for LED Applications
Samuelson, Lars
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE AND INTERNATIONAL QUANTUM ELECTRONICS CONFERENCE (CLEO EUROPE/IQEC), 2013,
[7] Submicron technology for III-nitride semiconductors
Palacios, T
Calle, F
Monroy, E
Muñoz, E
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2071 - 2074
[8] III-nitride nanowires for solar light harvesting: A review
Chatterjee, U.
Park, Ji-Hyeon
Um, Dae-Young
Lee, Cheul-Ro
RENEWABLE & SUSTAINABLE ENERGY REVIEWS, 2017, 79 : 1002 - 1015
[9] Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy
Stoica, Toma
Calarco, Raffaella
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 859 - 868
[10] Influence of gas flow rates on the formation of III-nitride nanowires
Chen, Liang-Yih
Liao, Cheng-, I
Peng, Hsuan-Ying
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, 2010, 7 (01): : 40 - 43

← 1 2 3 4 5 →