Topological signatures of Mo2TiC2O2

被引:0
|
作者
Parajuli, D. [1 ]
Samatha, K. [2 ]
机构
[1] Tribhuvan Univ, Res Ctr Appl Sci & Technol, Kathmandu 44613, Nepal
[2] Andhra Univ, Coll Sci & Technol, Dept Phys, Visakhapatnam 530003, Andhra Pradesh, India
关键词
CARBIDES; MXENES;
D O I
10.1063/5.0196244
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Mo2TiC2 is the Ordered Double Transitional Metal Layered Carbides (ODTMLC) derived from its parent MAX phases Mo2TiAlC2 by a wet chemical etching. Its oxidation was done by a new ablated plasma thrust method in which the MXenes were at 750 degrees C under an oxygen background in the pulsed laser deposition chamber. The reflective high electron energy diffraction technique assures the oxidation at the ambient gas pressure p = 0.1 mbar, which was described in the previous paper. The obtained Mo2TiC2O2 was transferred for their topological test under angle-resolved photoemission spectroscopy, circular dichroism test, and Chemical Potential (CP) analysis. An indirect energy bandgap of 125 meV was obtained. The sine function of alpha along with period pi and beta with period 2 pi shows that there is a possibility of helical spin textures in both alpha (electron-like pocket around (Gamma) over bar) and beta (elliptical electron-like pocket around (M) over bar). The CP analysis shows the possibility of at least 100 meV bandgap creation on a single surface so that the surface charges will flow without any effect of bulk. The Mo2TiC2O2 can be used as topological insulating material.
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页数:11
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