Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) beta-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A height-adjustable showerhead achieving a close distance to the susceptor (1.5 cm) was demonstrated to be a critical factor in increasing the stability of the Ga wetting layer (or Ga adlayer) on the surface and reducing parasitic particles. A film thickness of up to 3 mu m has been achieved while keeping the root mean square below 0.7 nm. Record carrier mobilities of 155 cm(2) V-1 s(-1) (2.2 mu m) and 163 cm(2) V-1 s(-1) (3 mu m) at room temperature were measured for (100) beta-Ga2O3 films with carrier concentrations of 5.7 x 10(16) and 7.1 x 10(16) cm(-3), respectively. Analysis of temperature-dependent Hall mobility and carrier concentration data revealed a low background compensating acceptor concentration of 4 x 10(15) cm(-3). (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/).