Influencing the morphological stability of MOVPE-grown β-Ga 2 O 3 films by O 2 /Ga ratio

被引:1
|
作者
Chou, Ta-Shun [1 ]
Akhtar, Arub [1 ]
Anooz, Saud Bin [1 ]
Rehm, Jana [1 ]
Ernst, Owen [1 ]
Seyidov, Palvan [1 ]
Fiedler, Andreas [1 ]
Miller, Wolfram [1 ]
Galazka, Zbigniew [1 ]
Remmele, Thilo [1 ]
Albrecht, Martin [1 ]
Popp, Andreas [1 ]
机构
[1] Leibniz Insatut Kristallzuchtung IKZ, Max Born Str 2, D-12489 Berlin, Germany
关键词
MOVPE; Morphology; STEP; INSTABILITIES; SURFACES; CRYSTALS; TERRACE; EDGE;
D O I
10.1016/j.apsusc.2024.159966
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The morphology evolution of (100) beta- Ga 2 O 3 films grown by metalorganic vapor phase epitaxy (MOVPE) is studied by atomic force microscopy (AFM). In particular, when grown under a high O 2 /Ga ratio (O 2 /Ga = 1250) and above a thickness of 350 nm, these films exhibit striking morphological instabilities, including step meandering and bunching, which contribute significantly to surface roughening. Transmission electronic microscopy (TEM) measurements reveal a morphological transition on the growing surface with a coexistence of step-flow and step-bunching growth modes resulting from these instabilities. In contrast, growth conditions with low O 2 /Ga ratios (O 2 /Ga = 350) effectively suppress meandering and bunching instabilities, resulting in films with excellent electrical properties. These observations are rationalized through the Burton -Cabrera -Frank (BCF) theory and Bales-Zangwill (BZ) instability (Gibbs-Thompson effect and Mullins-Sekerka instability) , thus bridging theoretical models and the experimental results.
引用
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页数:8
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