Reduced Leakage Current and Enhanced Photovoltaic Effect in Zn- Doped BiFeO3 Thin Films

被引：8

作者：

Wang, Xinyan ^{[1
,2
]}

Wang, Can ^{[1
,2
,3
]}

Yao, Xiaokang ^{[1
,2
]}

Zhou, Yong ^{[4
]}

Liang, Ning ^{[1
,2
]}

Jin, Qiao ^{[1
]}

Chen, Kun ^{[1
,2
]}

He, Meng ^{[1
,2
]}

Guo, Erjia ^{[1
,2
]}

Ge, Chen ^{[1
,2
]}

Yang, Guozhen ^{[1
,2
]}

Jin, Kuijuan ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

[4] Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2023年 / 5卷 / 02期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

BiFeO3 thin films; acceptor doping; leakage current; photovoltaic effect; work function; oxygen vacancy;

D O I：

10.1021/acsaelm.2c01690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zn-doped BiFeO3 (BFO) t h i n films with composi-tional formula BiFe1-xZnxO3(x = 0, 0.1, and 0.2) have been epitaxially grown on SrRuO3 buffered SrTiO3 substrates by pulsed laser deposition. The high-concentration Zn doping does not suppress the ferroelectric polarization of the BFO films, and the Zn-doped BFO t h i n films also show reduced leakage current and an enhanced photovoltaic effect. By optical and photoelectron spectroscopy measurements, with Zn doping, the BFO t h i n films show more oxygen vacancies and a structural evolution, and moreover, a blue-shift of optical bandgap and an increase of work function are demonstrated . The reduction of leakage current and the enhancement of photovoltaic effect are related to the variation of interfacial Schottky junctions and oxygen vacancies with doping. This study reveals systematic insights into the effects of Zn doping on the physical properties of BFO t h i n films.

引用

页码：1234 / 1242

页数：9

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