BiFeO;
thin films;
Leakage current;
Hysteresis loop;
Eu and Mn codoping;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
We prepared (Bi0.94Eu0.06)(Fe0.94Mn0.06)O3 (BEFM), (Bi0.94Eu0.06)FeO3 (BEFO), and BiFeO3 (BFO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition method. X-ray diffraction and Raman scattering results showed that the rhombohedral structure of the BFO film was not affected by the substitution of Eu and Mn ions. A much reduced leakage current was observed in the BEFM thin film capacitor compared to the BEFO and BFO thin film capacitors. Higher electrical breakdown field was observed in the BEFM and BEFO thin film capacitors than in the BFO thin film capacitor.
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
Lee, M. H.
Lee, S. C.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
Lee, S. C.
Sung, Y. S.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
Sung, Y. S.
Kim, M-H.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
Kim, M-H.
论文数: 引用数:
h-index:
机构:
Song, T. K.
Kim, W-J.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
Kim, W-J.
Do, D.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
Do, D.
Kim, S. S.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
Kim, S. S.
Cho, J. H.
论文数: 0引用数: 0
h-index: 0
机构:
Pukyong Natl Univ, Dept Phys, Pusan 608737, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea