Reduced leakage current and improved ferroelectric properties of Eu and Mn codoped BiFeO3 thin films

被引：0
|
作者：
D. Do
J. W. Kim
S. S. Kim
W. -J. Kim
M. H. Lee
H. J. Cho
J. H. Cho
T. K. Song
Y. S. Sung
M. H. Kim
机构：
[1] Changwon National University,Department of Physics
[2] Changwon National University,School of Nano and Advanced Materials Engineering
来源：
Journal of the Korean Physical Society | 2012年 / 60卷
关键词：
BiFeO; thin films; Leakage current; Hysteresis loop; Eu and Mn codoping;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We prepared (Bi0.94Eu0.06)(Fe0.94Mn0.06)O3 (BEFM), (Bi0.94Eu0.06)FeO3 (BEFO), and BiFeO3 (BFO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition method. X-ray diffraction and Raman scattering results showed that the rhombohedral structure of the BFO film was not affected by the substitution of Eu and Mn ions. A much reduced leakage current was observed in the BEFM thin film capacitor compared to the BEFO and BFO thin film capacitors. Higher electrical breakdown field was observed in the BEFM and BEFO thin film capacitors than in the BFO thin film capacitor.
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页码：203 / 206
页数：3
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