Structure, relaxation behavior and dielectric properties of HfO2 modified Ba (Zr0.2Ti0.8)O3 ceramics synthesized by liquid phase coating method

被引:1
|
作者
Zhang, Chen [1 ]
Li, Haoliang [1 ]
Wang, Chun [1 ]
Zhang, Xing [1 ]
机构
[1] Jiangsu Univ Sci & Technol, Dept Mat Sci & Engn, Zhenjiang 212003, Peoples R China
关键词
Barium zirconate titanate; Liquid phase coating method; Ceramics; Relaxor behavior; Dielectric properties; RELAXOR BEHAVIOR; FERROELECTRIC PROPERTIES; ENERGY-STORAGE; BARIUM; MICROSTRUCTURE; TEMPERATURE; TRANSITION;
D O I
10.1016/j.mseb.2024.117187
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The z mol% (z = 0, 0.5, 1, 2, 3, 5) HfO2 doped Ba(Zr0.2Ti0.8)O3 ceramics were synthesized by the liquid phase coating method. The HfO2 doped samples exhibit cubic perovskite structure and a pyrochlore phase is formed in the 5 mol% HfO2 doped BZT ceramic due to the substitution of Hf4+ ions for host B site ions. The HfO2 modified Ba(Zr0.2Ti0.8)O3 ceramics possess uniform grain size distribution and the average grain size increases with the increasing HfO2 amount when z <= 1. After increasing z up to 2, the exaggerated grain growth appears in the BZT based ceramics. The dielectric frequency dispersion for Ba(Zr0.2Ti0.8)O3 based ceramics gets enhanced as the HfO2 concentration increases and the almost complete transition diffuseness induced by composition inhomogeneity can be obtained. A comprehensive performance (high epsilon rRT, low tan delta RT and fine Delta epsilon r/epsilon r) is obtained for the 1 mol% HfO2 modified Ba(Zr0.2Ti0.8)O3 ceramic.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Effects of bottom electrodes on dielectric properties of epitaxial 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films
    W. J. Jie
    Y. Zhang
    Journal of Materials Science: Materials in Electronics, 2010, 21 : 149 - 152
  • [22] Effects of bottom electrodes on dielectric properties of epitaxial 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films
    Jie, W. J.
    Zhang, Y.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (02) : 149 - 152
  • [23] Ferroelectric relaxor behavior and dielectric properties of La/Y co-doped (Ba0.9Ca0.1)(Zr0.2Ti0.8)O3 ceramics
    Anqi Li
    Yu Wang
    Liu Yang
    Ping Yang
    Gang Wang
    Jinwei Chen
    Ruilin Wang
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 6150 - 6155
  • [24] Ferroelectric relaxor behavior and dielectric properties of La/Y co-doped (Ba0.9Ca0.1)(Zr0.2Ti0.8)O3 ceramics
    Li, Anqi
    Wang, Yu
    Yang, Liu
    Yang, Ping
    Wang, Gang
    Chen, Jinwei
    Wang, Ruilin
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (06) : 6150 - 6155
  • [25] Dielectric Properties of Ba0.6Sr0.4(Zr0.2Ti0.8)O3 Ceramic Doped with Al2O3
    Wang Xilin
    Zhao Yuzhen
    Liu Shanshan
    Zhou Heping
    RARE METAL MATERIALS AND ENGINEERING, 2011, 40 : 418 - 420
  • [26] Enhanced electrical properties of multilayer Ba(Zr0.2Ti0.8)O3/Ba0.6Sr0.4TiO3/Ba(Zr0.2Ti0.8)O3thin films for tunable microwave applications
    Qin, W. F.
    Xiong, J.
    Zhu, J.
    Tang, J. L.
    Jie, W. J.
    Zhang, Y.
    Li, Y. R.
    JOURNAL OF MATERIALS SCIENCE, 2008, 43 (01) : 409 - 412
  • [27] Preparation and Properties of Ba(Zr0.2Ti0.8)O3 Thin Films by Chemical Solution Deposition
    Maiwa, Hiroshi
    Ohashi, Kohei
    Hayashi, Takashi
    FERROELECTRICS, 2009, 381 : 67 - 73
  • [28] Reactively sputtered HfO2 and Ba(Zr0.2Ti0.8)O3-HfO2 dielectrics for metal-insulator-metal capacitor applications
    Zhang, Li-Feng
    Xu, Hui
    Zhang, Qiu-Xiang
    Ding, Shi-Jin
    Zhang, David Wei
    MICROELECTRONIC ENGINEERING, 2013, 106 : 96 - 99
  • [29] Effects of texture on the dielectric properties of Ba(Zr0.2Ti0.8)O3 thin films prepared by pulsed laser deposition
    Tang, XG
    Wang, XX
    Wong, KH
    Chan, HLW
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (06): : 1253 - 1256
  • [30] Enhanced electrical properties of multilayer Ba(Zr0.2Ti0.8)O3/Ba0.6Sr0.4TiO3/Ba(Zr0.2Ti0.8)O3thin films for tunable microwave applications
    W. F. Qin
    J. Xiong
    J. Zhu
    J. L. Tang
    W. J. Jie
    Y. Zhang
    Y. R. Li
    Journal of Materials Science, 2008, 43 : 409 - 412