A comparison of resistive switching parameters for memristive devices with HfO2 monolayers and Al2O3/HfO2 bilayers at the wafer scale

被引：0

作者：

Perez, Eduardo ^{[1
,2
]}

Maldonado, David ^{[3
]}

Mahadevaiah, Mamathamba K. ^{[1
]}

Quesada, Emilio Perez-Bosch ^{[1
]}

Cantudo, Antonio ^{[3
]}

Jimenez-Molinos, Francisco ^{[3
]}

Wenger, Christian ^{[1
,2
]}

Roldan, Juan B. ^{[3
]}

机构：

[1] IHP Leibniz Inst Fuer Innovat Mikroelektron, Frankfurt, Germany

[2] BTU Cottbus Senftenberg, Cottbus, Germany

[3] Univ Granada, Dept Elect & Tecnol Computadores, Granada, Spain

来源：

2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE | 2023年

关键词：

Cycle-to-cycle variability; device-to-device variability; memristive device; monolayer; bilayer; parameter extraction; wafer-scale;

D O I：

10.1109/CDE58627.2023.10339417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Memristive devices integrated in 200 mm wafers manufactured in 130 nm CMOS technology with two different dielectrics, namely, a HfO2 monolayer and an Al2O3/HfO2 bilayer, have been measured. The cycle-to-cycle (C2C) and device-to-device (D2D) variability have been analyzed at the wafer scale using different numerical methods to extract the set (V-set) and reset (V-reset) voltages. Some interesting differences between both technologies were found in terms of switching characteristics.

引用

页数：5

共 50 条

[31] Electrical Analysis of Atomic Layer Deposited Thin HfO2 and HfO2/Ta2O5-Based Memristive Devices
Kumar, Sanjay
Yadav, Deepika
Ramesh, Rahul
Stathopoulos, Spyros
Tsiamis, Andreas
Prodromakis, Themis
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 72 (04) : 1780 - 1787
[32] Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks
Min, BG
Devireddy, SP
Çelik-Butler, Z
Wang, F
Zlotnicka, A
Tseng, HH
Tobin, PJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (10) : 1679 - 1687
[33] Comparative Investigation of Interfacial Characteristics between HfO2/Al2O3 and Al2O3/HfO2 Dielectrics on AlN/p-Ge Structure
Kim, Hogyoung
Yun, Hee Ju
Choi, Seok
Choi, Byung Joon
KOREAN JOURNAL OF MATERIALS RESEARCH, 2019, 29 (08): : 463 - 468
[34] Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS
Shu-rui Cao
Xiao-yu Ke
Si-ting Ming
Duo-wei Wang
Tong Li
Bing-yan Liu
Yao Ma
Yun Li
Zhi-mei Yang
Min Gong
Ming-min Huang
Jin-shun Bi
Yan-nan Xu
Kai Xi
Gao-bo Xu
Sandip Majumdar
Journal of Materials Science: Materials in Electronics, 2019, 30 : 11079 - 11085
[35] Investigations of switching phenomena in Pt/HfO2/Ti/Pt memristive devices
Garda, Bartlomiej
Kasinski, Krzysztof
Ogorzalek, Maciej
Galias, Zbigniew
2017 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN (ECCTD), 2017,
[36] Tri-level resistive switching characteristics and conductive * mechanism of HfO2/NiOx/HfO2 stacks
Chen, Tao
Zhang, Tao
Yin, Yuan-Xiang
Xie, Yu-Sha
Qiu, Xiao-Yan
ACTA PHYSICA SINICA, 2023, 72 (14)
[37] Comparative study of Al2O3, HfO2, and HfAlOx for improved self-compliance bipolar resistive switching
Sokolov, Andrey S.
Son, Seok Ki
Lim, Donghwan
Han, Hoon Hee
Jeon, Yu-Rim
Lee, Jae Ho
Choi, Changhwan
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2017, 100 (12) : 5638 - 5648
[38] Study of the resistive switching effect in In/HfO2/Ptdevices
Quinonez, M. F.
Suarez, L.
Ordonez, J. E.
Arango, I. C.
Gomez, M. E.
Lopera, W.
MATERIALS TODAY-PROCEEDINGS, 2019, 14 : 139 - 143
[39] Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure
Liu, Yulin
Ouyang, Sha
Yang, Jie
Tang, Minghua
Wang, Wei
Li, Gang
Zou, Zhi
Liang, Yifan
Li, Yucheng
Xiao, Yongguang
Yan, Shaoan
Chen, Qilai
Li, Zheng
SOLID-STATE ELECTRONICS, 2020, 173
[40] Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation
Maestro-Izquierdo, M.
Gonzalez, M. B.
Jimenez-Molinos, F.
Moreno, E.
Roldan, J. B.
Campabadal, F.
NANOTECHNOLOGY, 2020, 31 (13)

← 1 2 3 4 5 →