A comparison of resistive switching parameters for memristive devices with HfO2 monolayers and Al2O3/HfO2 bilayers at the wafer scale

被引：0

作者：

Perez, Eduardo ^{[1
,2
]}

Maldonado, David ^{[3
]}

Mahadevaiah, Mamathamba K. ^{[1
]}

Quesada, Emilio Perez-Bosch ^{[1
]}

Cantudo, Antonio ^{[3
]}

Jimenez-Molinos, Francisco ^{[3
]}

Wenger, Christian ^{[1
,2
]}

Roldan, Juan B. ^{[3
]}

机构：

[1] IHP Leibniz Inst Fuer Innovat Mikroelektron, Frankfurt, Germany

[2] BTU Cottbus Senftenberg, Cottbus, Germany

[3] Univ Granada, Dept Elect & Tecnol Computadores, Granada, Spain

来源：

2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE | 2023年

关键词：

Cycle-to-cycle variability; device-to-device variability; memristive device; monolayer; bilayer; parameter extraction; wafer-scale;

D O I：

10.1109/CDE58627.2023.10339417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Memristive devices integrated in 200 mm wafers manufactured in 130 nm CMOS technology with two different dielectrics, namely, a HfO2 monolayer and an Al2O3/HfO2 bilayer, have been measured. The cycle-to-cycle (C2C) and device-to-device (D2D) variability have been analyzed at the wafer scale using different numerical methods to extract the set (V-set) and reset (V-reset) voltages. Some interesting differences between both technologies were found in terms of switching characteristics.

引用

页数：5

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