A 14b 500 MS/s Single-Channel Pipelined-SAR ADC With Reference Ripple Mitigation Techniques and Adaptively Biased Floating Inverter Amplifier

被引:5
|
作者
Jiang, Wenning [1 ,2 ]
Zhu, Yan [3 ]
Chen, Chixiao [1 ,2 ]
Xu, Hao [4 ]
Liu, Qi [2 ]
Liu, Ming [1 ,2 ]
Martins, Rui P. [3 ,5 ]
Chan, Chi-Hang [3 ]
机构
[1] Fudan Univ, Frontier Inst Chips & Syst, Shanghai 200433, Peoples R China
[2] Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
[3] Univ Macau, Inst Microelect, Dept ECE FST, State Key Lab Analog & Mixed Signal VLSI, Macau, Peoples R China
[4] Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 201203, Peoples R China
[5] Univ Lisbon, Inst Super Tecn, P-1049001 Lisbon, Portugal
基金
中国国家自然科学基金;
关键词
Adaptive bias; analog-to-digital converter (ADC); floating inverter amplifier (FIA); pipelined-successive-approximation-register (SAR) ADC; reference ripple cancellation (RRC); reference ripple neutralization (RRN);
D O I
10.1109/JSSC.2023.3290119
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a 14-bit 500 MS/s single-channel pipelined-successive-approximation-register (SAR) analog-todigital converter (ADC) with an adaptively biased floating inverter amplifier (AB-FIA) as the residue amplifier (RA) and a hybrid reference ripple mitigation (H-RRM) technique to relax the power and area burden on the reference stabilization. Leveraging the adaptively biased architecture in the last stage FIA, the speed and open-loop gain of the proposed two-stage FIA are enhanced compared with the conventional cascode counterpart. Besides, the impact of the reference error on the pipelined-SAR conversion accuracy is alleviated by hybridizing the improved reference ripple cancellation (RRC), reference ripple neutralization (RRN), and reference buffer (RBUF). The improved RRC removes the potential noise coupled from the floating capacitor to counter the decision error during the sub-SAR conversion in the first stage. Meanwhile, the RRN facilitates a rapid reference recovery. These acts constitute the H-RRM, which assists a high-speed and high-resolution pipelined-SAR process with a relaxed integrated reference RBUF with low-power and compact area. The prototype ADC was fabricated in a 28 nm CMOS process; it consumes 6.34 mW total power at 500 MS/s, including 2.4 mW dynamic power of RBUF. It occupies an active area of 0.018 mm(2), which the ADC core area of 0.0168 mm(2) and the area of RBUF with a 2.3 pF decoupling capacitor is 0.00105 mm(2). The measured signal to noise and distortion ratio (SNDR) and spurious free dynamic range (SFDR) are 64.2 dB and 80.55 dB with a Nyquist input, respectively, leading to a 170.2 dB Schreier figure-of-merit (FoM) (FoMS) and 9.6 fJ/conversion-step Walden FoM (FoMW).
引用
收藏
页码:2709 / 2721
页数:13
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