Frequency dependent dielectric spectroscopy of Au/n-Si structure with stannic oxide (SnO2) interfacial layer

This study investigated the frequency dependent dielectric spectrum of Au/Si structures in which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were used as interface. Surface morphological examination of interfacial layer was made by atomic force microscopy and scanning electron microscope. The analyzes revealed a uniform and low surface roughness of 2.66 nm, which is important for high performance applications. Capacitance-frequency (C-f) and conductance-frequency (G/w-f) analysis techniques were used to characterize the produced devices. For this purpose, measurements were made at 1-1000 kHz frequency range and dc voltages between - 0.5 and 6.0 V with steps of 0.02 V. All measurement processes were performed at room temperature and under dark environment. The Complex impedance Cole-Cole plots showed the relaxation behavior as non-Debye type. The contribution of grain and grain boundary to conductance was predicted. Module analysis showed that the electrical transport in the material was in the form of a hopping mechanism.