2.2 W/mm at 94 GHz in AlN/GaN/AlN High-Electron-Mobility Transistors on SiC

被引：2

作者：

Hickman, Austin ^{[1
]}

Chaudhuri, Reet ^{[1
]}

Li, Lei ^{[1
]}

Nomoto, Kazuki ^{[1
]}

Moser, Neil ^{[2
]}

Elliott, Michael ^{[2
]}

Guidry, Matthew ^{[3
]}

Shinohara, Keisuke ^{[4
]}

Hwang, James C. M. ^{[5
]}

Xing, Huili Grace ^{[1
,5
,6
]}

Jena, Debdeep ^{[1
,5
,6
]}

机构：

[1] Cornell Univ, Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Wright Patterson AFB, Dayton, OH 45433 USA

[3] UC Santa Barbara, Santa Barbara, CA 93106 USA

[4] Teledyne Sci & Imaging, Thousand Oaks, CA 91360 USA

[5] Cornell Univ, Mat Sci & Engn, Ithaca, NY 14853 USA

[6] Cornell Univ, Kavli Inst, Ithaca, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2023年 / 220卷 / 16期

关键词：

AlN; GaN; millimeter waves; PERFORMANCE; VOLTAGE;

D O I：

10.1002/pssa.202200774

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high-power, millimeter-wave amplification. Herein, load-pull power performance at 30 and 94 GHz for AlN/GaN/AlN high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) is reported. When tuned for peak power-added efficiency (PAE), the reported AlN/GaN/AlN HEMT shows PAE of 25% and 15%, with associated output power (Pout) of 2.5 and 1.7 W mm(-1), at 30 and 94 GHz, respectively. At 94 GHz, the maximum Pout generated is 2.2 W mm(-1), with associated PAE of 13%.

引用

页数：4

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