First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

被引：31

作者：

Hickman, Austin ^{[1
]}

Chaudhuri, Reet ^{[1
]}

Li, Lei ^{[1
]}

Nomoto, Kazuki ^{[1
]}

Bader, Samuel James ^{[2
]}

Hwang, James C. M. ^{[3
]}

Xing, Huili Grace ^{[1
,3
]}

Jena, Debdeep ^{[1
,2
,3
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Appl & Engn Phys Dept, Ithaca, NY 14853 USA

[3] Cornell Univ, Mat Sci & Engn Dept, Ithaca, NY 14853 USA

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷 / 09期

关键词：

GaN; AlN; output power; mm-wave; load-pull; GANHEMTS;

D O I：

10.1109/JEDS.2020.3042050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Results are highlighted by record high on-current of 3.6 A/mm, and record maximum oscillation frequency (f(max)) of 233 GHz. The load-pull power sweep at 10 GHz demonstrate a peak power added efficiency (PAE) of 22.7% with an associated gain (G(T)) of 8.7 dB and output power (P-out) of 3 W/mm. When optimized for power, the peak P-out of 3.3 W/mm has an associated PAE of 14.7% and G(T) of 3.2 dB. This first demonstration is encouraging for the mm-wave power potential of the AlN/GaN/AlN HEMT.

引用

页码：121 / 124

页数：4

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First RF Power Operation of AlN/GaN/AlN HEMTs With &gt;3 A/mm and 3 W/mm at 10 GHz

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz