First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

被引：31

作者：

Hickman, Austin ^{[1
]}

Chaudhuri, Reet ^{[1
]}

Li, Lei ^{[1
]}

Nomoto, Kazuki ^{[1
]}

Bader, Samuel James ^{[2
]}

Hwang, James C. M. ^{[3
]}

Xing, Huili Grace ^{[1
,3
]}

Jena, Debdeep ^{[1
,2
,3
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Appl & Engn Phys Dept, Ithaca, NY 14853 USA

[3] Cornell Univ, Mat Sci & Engn Dept, Ithaca, NY 14853 USA

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷 / 09期

关键词：

GaN; AlN; output power; mm-wave; load-pull; GANHEMTS;

D O I：

10.1109/JEDS.2020.3042050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Results are highlighted by record high on-current of 3.6 A/mm, and record maximum oscillation frequency (f(max)) of 233 GHz. The load-pull power sweep at 10 GHz demonstrate a peak power added efficiency (PAE) of 22.7% with an associated gain (G(T)) of 8.7 dB and output power (P-out) of 3 W/mm. When optimized for power, the peak P-out of 3.3 W/mm has an associated PAE of 14.7% and G(T) of 3.2 dB. This first demonstration is encouraging for the mm-wave power potential of the AlN/GaN/AlN HEMT.

引用

页码：121 / 124

页数：4

共 50 条

[21] mm-Wave Operation of AlN/GaN-Devices and MMICs at V- & W-band
Schwantuschke, D.
Godejohann, B-J
Brueckner, P.
Tessmann, A.
Quay, R.
2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018), 2018, : 238 - 241
[22] Large signal modeling of AlGaN/GaN HEMTs with Psat>4 W/mm at 30 GHz suitable for broadband power applications
van Raay, F
Quay, R
Kiefer, R
Schlechtweg, M
Weimann, G
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 451 - 454
[23] InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz
Lecourt, F.
Ketteniss, N.
Behmenburg, H.
Defrance, N.
Hoel, V.
Eickelkamp, M.
Vescan, A.
Giesen, C.
Heuken, M.
De Jaeger, J. -C.
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) : 1537 - 1539
[24] 9.2W/mm (13.8W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias
Zhang, AP
Rowland, LB
Kaminsky, EB
Tucker, JB
Kretchmer, JW
Allen, AF
Cook, J
Zhang, AP
ELECTRONICS LETTERS, 2003, 39 (02) : 245 - 247
[25] RF operation of AlN/Al0.25Ga0.75N/AlN HEMTs with f T /f max of 67/166 GHz
Kim, Eungkyun
Singhal, Jashan
Hickman, Austin
Li, Lei
Chaudhuri, Reet
Cho, Yongjin
Hwang, James C. M.
Jena, Debdeep
Xing, Huili Grace
APPLIED PHYSICS EXPRESS, 2023, 16 (11)
[26] Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd=12 V
Guo, Jingshu
Zhu, Jiejie
Liu, Siyu
Cheng, Kai
Zhu, Qing
Wang, Pengfei
Liu, Kai
Zhao, Ziyue
Qin, Lingjie
Zhou, Yuxi
Mi, Minhan
Hao, Yue
Ma, Xiaohua
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (04) : 590 - 593
[27] Enhancement-Mode InAlN/AlN/GaN HEMTs With 10-12 A/mm Leakage Current and 1012 ON/OFF Current Ratio
Wang, Ronghua
Saunier, Paul
Tang, Yong
Fang, Tian
Gao, Xiang
Guo, Shiping
Snider, Gregory
Fay, Patrick
Jena, Debdeep
Xing, Huili
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (03) : 309 - 311
[28] Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
Liu, Shenghou
Yang, Shu
Tang, Zhikai
Jiang, Qimeng
Liu, Cheng
Wang, Maojun
Chen, Kevin J.
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (07) : 723 - 725
[29] A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz
Lee, Min-Seong
Kim, Donghwan
Eom, Sukeun
Cha, Ho-Young
Seo, Kwang-Seok
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (10) : 995 - 997
[30] Collapse-Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz
Makiyama, K.
Ozaki, S.
Ohki, T.
Okamoto, N.
Minoura, Y.
Niida, Y.
Kamada, Y.
Joshin, K.
Watanabe, K.
Miyamoto, Y.
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,

← 1 2 3 4 5 →

First RF Power Operation of AlN/GaN/AlN HEMTs With &gt;3 A/mm and 3 W/mm at 10 GHz

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz