Effect of High Temperature on the Performanceof AlGaN/GaN T-Gate High-Electron MobilityTransistors With∼140-nm Gate Length

被引：7

作者：

Islam, Ahmad E. ^{[1
]}

Sepelak, Nicholas P. ^{[2
]}

Miesle, Adam T. ^{[2
]}

Lee, Hanwool ^{[3
]}

Snure, Michael ^{[1
]}

Nikodemski, Stefan ^{[2
]}

Walker, Dennis E. ^{[1
]}

Miller, Nicholas C. ^{[1
]}

Grupen, Matt ^{[1
]}

Leedy, Kevin D. ^{[1
]}

Liddy, Kyle J. ^{[1
]}

Crespo, Antonio ^{[1
]}

Hughes, Gary R. ^{[1
]}

Zhu, Wenjuan ^{[3
]}

Poling, Brian ^{[1
]}

Tetlak, Stephen ^{[1
]}

Chabak, Kelson D. ^{[1
]}

Green, Andrew J. ^{[1
]}

机构：

[1] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[2] KBR Inc, Beavercreek, OH 45431 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期

关键词：

Logic gates; Temperature measurement; MODFETs; HEMTs; Performance evaluation; Metals; Wide band gap semiconductors; AlGaN/GaN high electron mobility transistors (HEMTs); degradation; high temperature (HT) electronics; leakage; time-dependence; transconductance; MOBILITY TRANSISTORS; HEMTS; GAN;

D O I：

10.1109/TED.2024.3353694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High temperature (HT) electronics applica-tions will require the development of a broad range ofdevices made using different materials. Among thesedevices, high-electron mobility transistors (HEMTs) madewith GaN and its alloys are attractive for high-power radiofrequency (RF) applications. In this manuscript, we testedAlGaN/GaN HEMT devices having similar to 140-nm gate length atdifferent temperatures up to 500 degrees C. Devices were fab-ricated using Air Force Research Laboratory's (AFRL's)140-nmT-gate process technology. The performancedegradation measured in different devices was analyzed byconsidering changes in different device parameters and byusing appropriate device physics. Cross-sectional materi-als characterization using scanning transmission electronmicroscopy (STEM) and electron energy loss spectroscopy(EELS) was performed to understand the origin of perfor-mance degradation. This understanding will allow us todesign a sub-mu m GaN-based process technology compat-ible with HT RF applications

引用

页码：1805 / 1811

页数：7

共 50 条

[41] Fabrication of T-gate AlGaN/GaN heterostructure field effect transistor with thermally stable Schottky contact
Jeon, CM
Lee, JH
Lee, JH
Lee, KS
Lee, B
Lee, JL
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 74 - 77
[42] Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors
Nanjo, Takuma
Imai, Akifumi
Kurahashi, Kenichiro
Matsuda, Takashi
Suita, Muneyoshi
Yagyu, Eiji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)
[43] Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
Cui, Peng
Lv, Yuanjie
Liu, Huan
Cheng, Aijie
Luan, Chongbiao
Zhou, Yang
Lin, Zhaojun
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 119 (119):
[44] Effect of thermal annealing on 120-nm-T-shaped-Ti/Pt/Au-gate AlGaN/GaN high electron mobility transistors
Yamashita, Y
Endoh, A
Ikeda, K
Hikosaka, K
Mimura, T
Higashiwaki, M
Matsui, T
Hiyamizu, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 895 - 899
[45] Large gate leakage current in AlGaN/GaN high electron mobility transistors
Mizuno, S
Ohno, Y
Kishimoto, S
Maezawa, K
Mizutani, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (08): : 5125 - 5126
[46] Controlled gate surface processing of AlGaN/GaN high electron mobility transistors
Walker, Dennis E., Jr.
Fitch, Robert C., Jr.
Gillespie, James K.
Jessen, Gregg H.
Cassity, Paul D.
Breedlove, Joseph R.
Brillson, Leonard J.
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[47] AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate
Li, Y.
Ng, G. I.
Arulkumaran, S.
Liu, Z. H.
Ranjan, K.
Xing, W. C.
Ang, K. S.
Murmu, P. P.
Kennedy, J.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (03):
[48] Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths
Johnson, JW
Ren, F
Pearton, SK
Baca, AG
Han, J
Dabiran, AM
Chow, PP
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2002, 2 (3-4) : 325 - 332
[49] Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors
Zhou, R.
Li, L.
Zhao, W.
Liao, Z.
Nguyen, M. D.
Nunnenkamp, M.
Houwman, E. P.
Koster, G.
Rijnders, A. J. H. M.
Gravesteijn, D. J.
Hueting, R. J. E.
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 329 - 332
[50] Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Sudharsanan, S.
Karmalkar, Shreepad
JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)

← 1 2 3 4 5 →