A review of non-oxide semiconductors for photoelectrochemical water splitting

被引:6
|
作者
Kurnia, Fran [1 ,3 ]
Scott, Jason A. [2 ]
Valanoor, Nagarajan [1 ]
Hart, Judy N. N. [1 ]
机构
[1] UNSW Sydney, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] UNSW Sydney, Sch Chem Engn, Sydney, NSW 2052, Australia
[3] Tech Univ Munich, Dept Chem, Munich, Germany
基金
澳大利亚研究理事会;
关键词
SOLAR HYDROGEN-PRODUCTION; TA3N5 NANOROD ARRAYS; LIGHT-HARVESTING MATERIALS; VISIBLE-LIGHT; THIN-FILM; PHOTOCATALYTIC ACTIVITY; ZINC-SULFIDE; ELECTRONIC-STRUCTURES; METAL-NANOSTRUCTURES; SILICON PHOTOANODES;
D O I
10.1039/d2tc02533g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The process of photoelectrochemical (PEC) water splitting using semiconductor materials offers a remarkable opportunity to convert incident solar energy into chemical energy in hydrogen in a single step. This review chronicles the significant efforts made in developing non-oxide semiconductor materials to enable efficient hydrogen production using this process. We highlight some of these spectacular developments, ranging from the design of entirely new materials to innovative engineering of existing and known non-oxide semiconductors materials in terms of their morphology, composition and band structure such they can act as viable photoelectrodes. We start with a primer on fundamentals of the PEC process, followed by an overview of the materials development efforts. Then the review focuses on a key challenge in the large-scale uptake of these promising non-oxide materials, namely that of stability when in contact with harsh acidic or alkaline electrolytes. The review ends by outlining some of the next generation photoactive materials that are currently being pursued. We anticipate this review will spur on further research and development of non-oxide materials and devices, through both theoretical and experimental works. It is hoped ultimately to realize breakthrough non-oxide semiconductors that will enable improved performance, longer lifetimes and reduced production costs of hydrogen.
引用
收藏
页码:802 / 826
页数:25
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