Total Ionizing Dose and Proton Single Event Effects in AMD Ryzen Processor Fabricated in a 12-nm Bulk FinFET Process

被引:2
|
作者
Taggart, Jennifer L. [1 ]
Davis, Scott C. [1 ]
Daniel, Richard [1 ]
Foran, Brendan J. [1 ]
Bohra, Dhruv L. [1 ]
Hall, Andrew J. [1 ]
Wright, Aaron W. [1 ]
Hunnicutt, Hope [1 ]
机构
[1] Aerosp Corp, El Segundo, CA 90245 USA
关键词
COTS; finFET; Processors; Radiation Effects;
D O I
10.1109/REDW61050.2023.10265851
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Aerospace Corporation performed total ionizing dose (TID) and proton testing on the AMD Ryzen 3200G processor. The Ryzen processor is a system on chip that contains a 4-core central processing unit (CPU) and an integrated graphical processing unit (GPU). No changes in CPU performance were observed until 600 krad(Si) of dose, while changes to GPU performance were first noticed at 500 krad(Si). Degradation in CPU performance was only observed in processes requiring access to off chip memory, suggesting that radiation effects are most prevalent in the I/O circuitry and not in the digital logic or internal registers.
引用
收藏
页码:103 / 108
页数:6
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