Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation

被引：0
|
作者：
Chen, Jingjing [1 ]
Chen, Kebei [1 ]
Su, Xujun [1 ]
Niu, Mutong [1 ]
Wang, Qiqi [2 ]
Xu, Ke [1 ,2 ]
机构：
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398,Suzhou Ind Pk, Suzhou 215123, Peoples R China
[2] Jiangsu Inst Adv Semicond, Shenyang Natl Lab Mat Sci, Suzhou 215123, Jiangsu, Peoples R China
来源：
THIN SOLID FILMS | 2024年 / 791卷
基金：
中国国家自然科学基金;
关键词：
Aluminum nitride; Nano; -indentation; Dislocation; Slip systems; Shear stress;
D O I：
10.1016/j.tsf.2024.140240
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, the structure and slip systems of dislocations induced by nano-indentation in high quality c-plane (0001) and m-plane (1100) Aluminum nitride (AlN) single crystals have been systemically investigated. Dislocations with burgers vector of b = 1/3<1120> and b = 1/3<1123> were introduced on the (0001) basal planes and {1122} pyramidal planes in c-plane AlN, respectively. The similar investigation made in m-plane AlN shows that only {1010} <1120> slip system was confirmed to be activated when the indenter stress was applied along [1100] direction.
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页数：5
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