Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation

被引：0

作者：

Chen, Jingjing ^{[1
]}

Chen, Kebei ^{[1
]}

Su, Xujun ^{[1
]}

Niu, Mutong ^{[1
]}

Wang, Qiqi ^{[2
]}

Xu, Ke ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398,Suzhou Ind Pk, Suzhou 215123, Peoples R China

[2] Jiangsu Inst Adv Semicond, Shenyang Natl Lab Mat Sci, Suzhou 215123, Jiangsu, Peoples R China

来源：

THIN SOLID FILMS | 2024年 / 791卷

基金：

中国国家自然科学基金;

关键词：

Aluminum nitride; Nano; -indentation; Dislocation; Slip systems; Shear stress;

D O I：

10.1016/j.tsf.2024.140240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the structure and slip systems of dislocations induced by nano-indentation in high quality c-plane (0001) and m-plane (1100) Aluminum nitride (AlN) single crystals have been systemically investigated. Dislocations with burgers vector of b = 1/3<1120> and b = 1/3<1123> were introduced on the (0001) basal planes and {1122} pyramidal planes in c-plane AlN, respectively. The similar investigation made in m-plane AlN shows that only {1010} <1120> slip system was confirmed to be activated when the indenter stress was applied along [1100] direction.

引用

页数：5

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