High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites

被引:16
|
作者
Zhou, Zhiwen [1 ]
Li, Qihua [2 ]
Chen, Mojun [3 ]
Zheng, Xuerong [1 ]
Wu, Xiao [4 ]
Lu, Xinhui [4 ]
Tao, Shuxia [2 ]
Zhao, Ni [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong 999077, Peoples R China
[2] Eindhoven Univ Technol, Dept Appl Phys, Mat Simulat & Modelling, NL-5600 MB Eindhoven, Netherlands
[3] Hong Kong Univ Sci & Technol, Smart Mfg Thrust, Syst Hub, Guangzhou 511458, Peoples R China
[4] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
HALIDE PEROVSKITES; FASNI(3) CRYSTALS; GROWTH;
D O I
10.1021/acsenergylett.3c01400
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electronic devices based on tin halide perovskites often exhibit a poor operational stability. Here, we report an additive engineering strategy to realize high-performance and stable field-effect transistors (FETs) based on 3D formamidinium tin iodide (FASnI(3)) films. By comparatively studying the modification effects of two additives, i.e., phenethyl-ammonium iodide and 4-fluoro-phenyl-ethyl-ammonium iodide via combined experimental and theoretical investigations, we unambiguously point out the general effects of phenethyl-ammonium (PEA) and its fluorinated derivative (FPEA) in enhancing crystallization of FASnI(3) films and the unique role of fluorination in reducing structural defects, suppressing oxidation of Sn2+ and blocking oxygen and water involved defect reactions. The optimized FPEA-modified FASnI(3) FETs reach a record high field-effect mobility of 15.1 cm(2)/(V center dot s) while showing negligible hysteresis. The devices exhibit less than 10% and 3% current variation during over 2 h continuous bias stressing and 4200-cycle switching test, respectively, representing the best stability achieved so far for all Sn-based FETs.
引用
收藏
页码:4496 / 4505
页数:10
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