Praseodymium content influence on the resistive switching effect of HfO2 -based RRAM devices

被引：0

作者：

Vinuesa, G. ^{[1
]}

Garcia, H. ^{[1
]}

Ossorio, O. G. ^{[1
]}

Garcia-Ochoa, E. ^{[1
]}

Aarik, L. ^{[2
]}

Kukli, K. ^{[2
]}

Castan, H. ^{[1
]}

Duenas, S. ^{[1
]}

机构：

[1] Univ Valladolid, Dept Elect, Valladolid, Spain

[2] Univ Tartu, Inst Phys, Tartu, Estonia

来源：

2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE | 2023年

关键词：

RRAM; resistive-switching; memristor; dielectric; hafnium; praseodymium; OXIDE;

D O I：

10.1109/CDE58627.2023.10339528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work studies the effect of praseodymium doping on the resistive switching properties of HfO2 -based metal-insulator-metal devices. Samples with higher Pr content demonstrate lower switching voltages, and thus better resistive switching performance in terms of power consumption. Moreover, both devices with high and low Pr-content show good endurance characteristics. The lowest Pr-doped device delivering very low state cycle-to-cycle variability, and the highest Pr-content sample enduring a high number of cycles.

引用

页数：4

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