Degradation-related Defect Level in Weathered Silicon Heterojunction Modules Characterized by Deep Level Transient Spectroscopy

被引：0
|
作者：
Johnston, Steve [1 ]
Jordan, Dirk C.
Kern, Dana B.
Davis, Kristopher O.
Moutinho, Helio R.
Kroeger, George F.
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC | 2023年
关键词：
D O I：
10.1109/PVSC48320.2023.10359825
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Commercial silicon heterojunction modules known as heterojunction with intrinsic (amorphous silicon) thin-film layer (HIT) modules show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida have reduced photoluminescence intensity compared to a control module and have degradation dominated by voltage loss. Deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of 0.07, 0.16, and 0.50eV. DLTS on the weathered modules shows an additional deep-level, electron-trap defect state with an activation energy of 0.52eV.
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