Laplace transform deep level transient spectroscopy: New insight into defect microscopy

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Department of Electrical Engineering and Electronics, University of Manchester, Institute of Science and Technology, Manchester, United Kingdom [1 ]
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Mater. Sci. Technol. | / 10卷 / 1071-1073期
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Laplace transforms - Point defects;
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摘要
It is demonstrated that a resolution of deep level transient spectroscopy (DLTS) can be improved using the Laplace transform method for the emission rate analysis. Considerable confidence in this approach was gained through numerous tests carried out on two numerical algorithms used for the calculations as well as through measurements of a selection of well characterised point defects in various semiconductors. For each of these defects conventional DLTS gives broad featureless lines, whereas Laplace DLTS reveals a fine structure in the emission process producing the spectra. © 1995 The Institute of Materials.
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