A review on radiation-hardened memory cells for space and terrestrial applications

被引：17
|
作者：
Kumar, Mukku Pavan [1 ]
Lorenzo, Rohit [1 ]
机构：
[1] VIT AP Univ, Sch Elect Engn, Amaravati, Andhra Pradesh, India
来源：
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2023年 / 51卷 / 01期
关键词：
critical charge; figure of metric; single event upset; single event multiple node upset; soft error; NODE UPSET RECOVERY; READ-DECOUPLED SRAM; SOFT ERRORS; CMOS TECHNOLOGY; DESIGN; DEVICES; IMPACT; COLLECTION; CIRCUITS; DENSITY;
D O I：
10.1002/cta.3429
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of QCrit$$ {Q}_{Crit} $$ and the impact of QCrit$$ {Q}_{Crit} $$ on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells.
引用
收藏
页码：475 / 499
页数：25
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