InAs/GaAs quantum dot laterally coupled distributed feedback lasers at 1.3 μm

被引：1

作者：

Yu, Wenfu ^{[1
,2
]}

Zhao, Xuyi ^{[1
,2
]}

Han, Shixian ^{[1
,2
]}

Du, Antian ^{[3
]}

Liu, Ruotao ^{[1
,2
]}

Cao, Chunfang ^{[1
]}

Yan, Jinyi ^{[1
]}

Yang, Jin ^{[1
]}

Huang, Hua ^{[1
]}

Wang, Hailong ^{[3
]}

Gong, Qian ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2023年 / 21卷 / 01期

关键词：

InAs; quantum dot; laterally coupled distributed feedback laser; THRESHOLD; PERFORMANCE; ARRAY;

D O I：

10.3788/COL202321.011402

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the InAs/GaAs quantum dot laterally coupled distributed feedback (LC-DFB) lasers operating at room temperature in the wavelength range of 1.31 mu m. First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field. Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB. Moreover, a single chip integrating three LC-DFB lasers was tentatively explored. The three LC-DFB lasers on the chip can operate in single mode at room temperature, covering the wavelength span of 35.6 nm.

引用

下载

页数：5

共 50 条

[31] Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping
Lv, Zun-Ren
Zhang, Zhong-Kai
Yang, Xiao-Guang
Yang, Tao
APPLIED PHYSICS LETTERS, 2018, 113 (01)
[32] 1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon
Duan, Jianan
Huang, Heming
Dong, Bozhang
Jung, Daehwan
Norman, Justin C.
Bowers, John E.
Grillot, Frederic
IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (05) : 345 - 348
[33] InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
Kovsh, AR
Maleev, NA
Zhukov, AE
Mikhrin, SS
Vasil'ev, AP
Shernyakov, YM
Maximov, MV
Livshits, DA
Ustinov, VM
Alferov, ZI
Ledentsov, NN
Bimberg, D
ELECTRONICS LETTERS, 2002, 38 (19) : 1104 - 1106
[34] Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers
Gordeev, N. Yu.
Moiseev, E. I.
Fominykh, N. A.
Kryzhanovskaya, N. V.
Beckman, A. A.
Kornyshov, G. O.
Zubov, F. I.
Shernyakov, Yu. M.
Zhukov, A. E.
Maximov, M. V.
TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 3) : S196 - S199
[35] Doping Effect on Two-State Lasing in 1.3μm InAs/GaAs Quantum Dot Lasers
Wang, Rui
Yoon, Soon Fatt
Zhao, Han Xue
Tong, Cun Zhu
Liu, Chong Yang
Cao, Qi
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, : 73 - 74
[36] Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers
N. Yu. Gordeev
E. I. Moiseev
N. A. Fominykh
N. V. Kryzhanovskaya
A. A. Beckman
G. O. Kornyshov
F. I. Zubov
Yu. M. Shernyakov
A. E. Zhukov
M. V. Maximov
Technical Physics Letters, 2023, 49 : S196 - S199
[37] Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers
Marko, IP
Adams, AR
Sweeney, SJ
Sellers, IR
Mowbray, DJ
Skolnick, MS
Liu, HY
Groom, KM
2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2004, : 57 - 58
[38] InAs/GaInAs quantum dot DFB lasers emitting at 1.3μm
Klopf, F
Krebs, R
Wolf, A
Emmerling, M
Reithmaier, JP
Forchel, A
ELECTRONICS LETTERS, 2001, 37 (10) : 634 - 636
[39] Importance of Auger recombination in InAs 1.3 μm quantum dot lasers
Marko, IP
Andreev, AD
Adams, AR
Krebs, R
Reithmaier, JP
Forchel, A
ELECTRONICS LETTERS, 2003, 39 (01) : 58 - 59
[40] 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
Wang, Ting
Liu, Huiyun
Lee, Andrew
Pozzi, Francesca
Seeds, Alwyn
OPTICS EXPRESS, 2011, 19 (12): : 11381 - 11386

← 1 2 3 4 5 →