InAs/GaAs quantum dot laterally coupled distributed feedback lasers at 1.3 μm

被引:1
|
作者
Yu, Wenfu [1 ,2 ]
Zhao, Xuyi [1 ,2 ]
Han, Shixian [1 ,2 ]
Du, Antian [3 ]
Liu, Ruotao [1 ,2 ]
Cao, Chunfang [1 ]
Yan, Jinyi [1 ]
Yang, Jin [1 ]
Huang, Hua [1 ]
Wang, Hailong [3 ]
Gong, Qian [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Peoples R China
关键词
InAs; quantum dot; laterally coupled distributed feedback laser; THRESHOLD; PERFORMANCE; ARRAY;
D O I
10.3788/COL202321.011402
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report the InAs/GaAs quantum dot laterally coupled distributed feedback (LC-DFB) lasers operating at room temperature in the wavelength range of 1.31 mu m. First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field. Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB. Moreover, a single chip integrating three LC-DFB lasers was tentatively explored. The three LC-DFB lasers on the chip can operate in single mode at room temperature, covering the wavelength span of 35.6 nm.
引用
收藏
页数:5
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