InAs/GaAs quantum dot laterally coupled distributed feedback lasers at 1.3 μm

被引：1

作者：

Yu, Wenfu ^{[1
,2
]}

Zhao, Xuyi ^{[1
,2
]}

Han, Shixian ^{[1
,2
]}

Du, Antian ^{[3
]}

Liu, Ruotao ^{[1
,2
]}

Cao, Chunfang ^{[1
]}

Yan, Jinyi ^{[1
]}

Yang, Jin ^{[1
]}

Huang, Hua ^{[1
]}

Wang, Hailong ^{[3
]}

Gong, Qian ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2023年 / 21卷 / 01期

关键词：

InAs; quantum dot; laterally coupled distributed feedback laser; THRESHOLD; PERFORMANCE; ARRAY;

D O I：

10.3788/COL202321.011402

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the InAs/GaAs quantum dot laterally coupled distributed feedback (LC-DFB) lasers operating at room temperature in the wavelength range of 1.31 mu m. First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field. Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB. Moreover, a single chip integrating three LC-DFB lasers was tentatively explored. The three LC-DFB lasers on the chip can operate in single mode at room temperature, covering the wavelength span of 35.6 nm.

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页数：5

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