Numerical Investigation on Non-radiative Recombination in InGaAs Front and Rear Hetero-Junction Solar Cell

被引：0

作者：

Ma, Depu ^{[1
]}

Sodabanlu, Hassanet ^{[2
]}

Li, Gan ^{[1
]}

Asami, Meita ^{[1
]}

Watanabe, Kentaroh ^{[2
]}

Sugiyama, Masakazu ^{[1
,2
]}

Nakano, Yoshiaki ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn, Tokyo 1138656, Japan

[2] Univ Tokyo, RCAST, Tokyo 1538904, Japan

来源：

2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC | 2023年

关键词：

EFFICIENCY;

D O I：

10.1109/PVSC48320.2023.10359579

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Front hetero-junction (FHJ) and rear heterojunction (RHJ) InGaAs solar cells were grown by metal-organic vapor phase epitaxy (MOVPE). Compared with RHJ solar cell, FHJ InGaAs solar cell shows a better short circuit current density (Jsc), but a worse open circuit voltage (Voc). Based on simulation results, non-radiative recombination in FHJ and RHJ InGaAs solar cells has been compared. FHJ has a better carrier diffusion length, but greater carrier loss at the interface resulted to worse Voc. RHJ has a less carrier loss in the interface but worse carrier diffusion length resulted to worse Jsc.

引用

页数：3

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