Numerical Investigation on Non-radiative Recombination in InGaAs Front and Rear Hetero-Junction Solar Cell

被引：0
|
作者：
Ma, Depu [1 ]
Sodabanlu, Hassanet [2 ]
Li, Gan [1 ]
Asami, Meita [1 ]
Watanabe, Kentaroh [2 ]
Sugiyama, Masakazu [1 ,2 ]
Nakano, Yoshiaki [1 ]
机构：
[1] Univ Tokyo, Dept Elect Engn, Tokyo 1138656, Japan
[2] Univ Tokyo, RCAST, Tokyo 1538904, Japan
来源：
2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC | 2023年
关键词：
EFFICIENCY;
D O I：
10.1109/PVSC48320.2023.10359579
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Front hetero-junction (FHJ) and rear heterojunction (RHJ) InGaAs solar cells were grown by metal-organic vapor phase epitaxy (MOVPE). Compared with RHJ solar cell, FHJ InGaAs solar cell shows a better short circuit current density (Jsc), but a worse open circuit voltage (Voc). Based on simulation results, non-radiative recombination in FHJ and RHJ InGaAs solar cells has been compared. FHJ has a better carrier diffusion length, but greater carrier loss at the interface resulted to worse Voc. RHJ has a less carrier loss in the interface but worse carrier diffusion length resulted to worse Jsc.
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页数：3
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