Fabrication of Domain Wall based Magnetic Tunnel Junction Devices with Intrinsic Neuromorphic Functionality

被引:0
|
作者
Leonard, Thomas [1 ]
Liu, Samuel [1 ]
Jin, Harrison [1 ]
Friedman, Joseph S. [2 ]
Bennett, Christopher [3 ]
Incorvia, Jean Anne [1 ]
机构
[1] Univ Texas Austin, Elect & Comp Engn Dept, Austin, TX 78712 USA
[2] Univ Texas v, Elect & Comp Engn Dept, Dallas, TX 75080 USA
[3] Sandia Natl Labs, Dept Phys, Albuquerque, NM 87123 USA
关键词
Beyond CMOS; Magnetic domain walls; Neuromorphic computing; Spintronics;
D O I
10.1109/TMRC59626.2023.10264022
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We summarize our progress towards monolithic and analog neuromorphic computing utilizing domain wall-magnetic tunnel junction (DW-MTJ) devices. We have previously shown device performance for binary logic DW-MTJ devices. Here, we expand on that work by demonstrating neuromorphic functionality using shape-dependent tunability. We measure multi-weight synapses and stochastic neurons monolithically fabricated from the same material stack, enabling future integrated neuromorphic circuits. Future work includes fabrication of leaky integrate and fire (LIF) neurons to complete the library of neuromorphic functionality for a full DW-MTJ crossbar array capable of neuromorphic computing.
引用
收藏
页数:2
相关论文
共 50 条
  • [31] THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES
    Chantis, Athanasios N.
    Belashchenko, Kirill D.
    Tsymbal, Evgeny Y.
    Sus, Inna V.
    MODERN PHYSICS LETTERS B, 2008, 22 (26): : 2529 - 2551
  • [32] Double Perovskites Materials Based Magnetic Tunnel Junction Devices for MRAM Applications
    Kumari, Seema
    Yadav, Rekha
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2024, 60 (03) : 435 - 446
  • [33] Unipolar Magnetoelectric Magnetic Tunnel Junction Devices and Circuits
    Sharma, Nishtha
    Marshall, Andrew
    Dowben, Peter
    2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2017, : 861 - 865
  • [34] Large resistance change on magnetic tunnel junction based molecular spintronics devices
    Tyagi, Pawan
    Friebe, Edward
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2018, 453 : 186 - 192
  • [35] STRUCTURAL STABILITY OF MAGNETIC TUNNEL JUNCTION BASED MOLECULAR SPINTRONICS DEVICES (MTJMSD)
    Dillard, Joshua
    Amir, Uzma
    Tyagi, Pawan
    Lamberti, Vincent
    PROCEEDINGS OF THE ASME 2020 INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, IMECE2020, VOL 2B, 2020,
  • [36] Intrinsic frequency doubling in a magnetic tunnel junction-based spin torque oscillator
    Muduli, P. K.
    Heinonen, O. G.
    Akerman, Johan
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
  • [37] Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications
    Mansueto, Marco
    Chavent, Antoine
    Sousa, Ricardo
    Buda-Prejbeanu, Liliana D.
    Prejbeanu, Joan L.
    Dieny, Bernard
    2020 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2020), 2020, : 47 - 50
  • [38] Tunnel Junction Testbed Based Molecular Devices
    Tyagi, Pawan
    Baker, Collin
    D'Angelo, Christopher
    2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2014, : 801 - 804
  • [39] Layer-resolved imaging of domain wall interactions in magnetic tunnel junction-like trilayers
    Vogel, J.
    Cherifi, S.
    Pizzini, S.
    Romanens, F.
    Camarero, J.
    Petroff, F.
    Heun, S.
    Locatelli, A.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (47)
  • [40] Fabrication and evaluation of magnetic tunnel junction with MgO tunneling barrier
    Choi, Takeshi Sakaguchi Hoon
    Ahn Sung-Jin
    Sugimura, Takeaki
    Park, Mungi
    Oogane, Milcihiko
    Oh, Hyuckjae
    Hayakawa, Jun
    Ikeda, Shoji
    Lee, Young Min
    Fukushima, Takafumi
    Miyazaki, Terunobu
    Ohno, Hideo
    Koyanagi, Mitsumasa
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3228 - 3232