Fabrication of Domain Wall based Magnetic Tunnel Junction Devices with Intrinsic Neuromorphic Functionality

被引：0

作者：

Leonard, Thomas ^{[1
]}

Liu, Samuel ^{[1
]}

Jin, Harrison ^{[1
]}

Friedman, Joseph S. ^{[2
]}

Bennett, Christopher ^{[3
]}

Incorvia, Jean Anne ^{[1
]}

机构：

[1] Univ Texas Austin, Elect & Comp Engn Dept, Austin, TX 78712 USA

[2] Univ Texas v, Elect & Comp Engn Dept, Dallas, TX 75080 USA

[3] Sandia Natl Labs, Dept Phys, Albuquerque, NM 87123 USA

来源：

2023 IEEE 34TH MAGNETIC RECORDING CONFERENCE, TMRC | 2023年

关键词：

Beyond CMOS; Magnetic domain walls; Neuromorphic computing; Spintronics;

D O I：

10.1109/TMRC59626.2023.10264022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We summarize our progress towards monolithic and analog neuromorphic computing utilizing domain wall-magnetic tunnel junction (DW-MTJ) devices. We have previously shown device performance for binary logic DW-MTJ devices. Here, we expand on that work by demonstrating neuromorphic functionality using shape-dependent tunability. We measure multi-weight synapses and stochastic neurons monolithically fabricated from the same material stack, enabling future integrated neuromorphic circuits. Future work includes fabrication of leaky integrate and fire (LIF) neurons to complete the library of neuromorphic functionality for a full DW-MTJ crossbar array capable of neuromorphic computing.

引用

页数：2

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