Antiferromagnetic domain wall memory with neuromorphic functionality

被引:0
|
作者
J. Godinho
P. K. Rout
R. Salikhov
O. Hellwig
Z. Šobáň
R. M. Otxoa
K. Olejník
T. Jungwirth
J. Wunderlich
机构
[1] University of Regensburg,Institute of Experimental and Applied Physics
[2] Helmholtz-Zentrum Dresden-Rossendorf,Institute of Ion Beam Physics and Materials Research
[3] Chemnitz University of Technology,Institute of Physics
[4] Czech Academy of Sciences,Institute of Physics
[5] Hitachi Cambridge Laboratory,School of Physics and Astronomy
[6] Donostia International Physics Center,undefined
[7] University of Nottingham,undefined
来源
npj Spintronics | / 2卷 / 1期
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D O I
10.1038/s44306-024-00027-2
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摘要
Antiferromagnetic materials have unique properties due to their alternating spin arrangements. Their compensated magnetic order, robust against external magnetic fields, prevents long-distance crosstalk from stray fields. Furthermore, antiferromagnets with combined parity and time-reversal symmetry enable electrical control and detection of ultrafast exchange-field enhanced spin manipulation up to THz frequencies. Here we report the experimental realization of a nonvolatile antiferromagnetic memory mimicking an artificial synapse, in which the reconfigurable synaptic weight is encoded in the ratio between reversed antiferromagnetic domains. The non-volatile memory is “written” by spin-orbit torque-driven antiferromagnetic domain wall motion and “read” by nonlinear magnetotransport. We show that the absence of long-range interacting stray magnetic fields leads to very reproducible electrical pulse-driven variations of the synaptic weights.
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