Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance

被引：5

作者：

Xie, Lu ^{[1
,2
]}

Zhu, Huilong ^{[1
,2
]}

Zhang, Yongkui ^{[1
]}

Ai, Xuezheng ^{[1
,3
]}

Li, Junjie ^{[1
]}

Wang, Guilei ^{[1
,3
]}

Liu, Jinbiao ^{[1
]}

Du, Anyan ^{[1
]}

Yang, Hong ^{[1
]}

Yin, Xiaogen ^{[1
,2
]}

Huang, Weixing ^{[1
,2
]}

Li, Chen ^{[1
,2
]}

Li, Yangyang ^{[1
,2
]}

Wang, Qi ^{[1
]}

Lu, Shunshun ^{[1
]}

Kong, Zhenzhen ^{[1
]}

Xiang, Jinjuan ^{[1
,3
]}

Du, Yong ^{[1
]}

Luo, Jun ^{[1
]}

Li, Junfeng ^{[1
]}

Radamson, Henry H. ^{[1
,2
]}

Wang, Wenwu ^{[1
]}

Ye, Tianchun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Beijing Superstring Acad Memory Technol, Beijing 100176, Peoples R China

来源：

ACS NANO | 2023年 / 17卷 / 22期

关键词：

Ge; nanowire; nanosheet (NW/NS); p-typevertical sandwich gate-all-around field-effect transistors (pVSAFETs); self-aligned metal gates; ozone postoxidation (OPO); hourglass-shaped channels; CMOS; GE; OPPORTUNITIES; CHALLENGES;

D O I：

10.1021/acsnano.3c02518

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A special Ge nanowire/nanosheet (NW/NS) p-type vertical sandwich gate-all-around (GAA) field-effect transistor (FET) (Ge NW/NS pVSAFET) with self-aligned high-kappa metal gates (HKMGs) is proposed. The Ge pVSAFETs were fabricated by high-quality GeSi/Ge epitaxy, an exclusively developed self-limiting isotropic quasi atomic layer etching (qALE) of Ge selective to both GeSi and the (111) plane, top-drain implantation, and ozone postoxidation (OPO) channel passivation. The Ge pVSAFETs, which have hourglass-shaped (111) channels with the smallest size range from 5 to 20 nm formed by qALE, have reached a record high I (on) of similar to 291 mu A/mu m and exhibited good short channel effects (SCEs) control. The integration flow is compatible with mainstream CMOS processes, and Ge pVSAFETs with precise control of gate lengths/channel sizes were obtained.

引用

页码：22259 / 22267

页数：9

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