Integrated Nitride optoelectronic chip for motion detection and visible light communication

The movement of objects is everywhere in nature. With the rapid development of smart vehicle and 6G mobile communications, the demand for highly Integrated Sensing and Communication (ISAC) devices with communication and motion sensing is increasing. Based on the coexistence of luminescence and detection characteristics of GaN multiple quantum wells, an integrated optoelectronic chip based on the epi-taxial GaN multiple quantum wells material on sapphire substrate with sensitive motion detection and visible light communication. The transmitter of the optoelectronic chip transmits a visible light signal in blue band to the moving target object. The visible light signal modulated by the motion of the target object is reflected back to the receiver of the chip to stimulate the changing photocurrent. By analyzing the changing photocur-rent, the motion of the target object rotating at different speeds can be detected. The change period of the photocurrent curve is consistent with the rotation period of the target object. We also study the optoelectron-ic characteristics and the visible light communication performance of the optoelectronic chip. This chip can be used as transceiver terminal of visible light communication system and can also process and transmit the motion detection signals collected by the chip. The optoelectronic chip based on GaN multiple quantum wells materials is a highly integrated ISAC terminal device with application value.