Recent Advances of III-nitride Integrated Photonics Technology for Visible Light Applications

被引：0
|
作者：
Yi, Shulan [1 ,2 ,3 ]
Hu, Junhui [1 ,2 ,3 ,4 ]
Shen, Chao [1 ,2 ,3 ,4 ]
机构：
[1] Fudan Univ, Sch Informat Sci & Technol, Shanghai 200438, Peoples R China
[2] Pengcheng Lab, Shenzhen 518000, Guangdong, Peoples R China
[3] Fudan Univ, Key Lab Informat Sci Electromagnet Waves, MoE, Shanghai 200438, Peoples R China
[4] ZGC Inst Ubiquitous X Innovat & Applicat, Beijing 100876, Peoples R China
来源：
2023 IEEE PHOTONICS SOCIETY SUMMER TOPICALS MEETING SERIES, SUM | 2023年
基金：
上海市自然科学基金;
关键词：
GaN; semiconductor laser; photonic integrated circuit; optoelectronics devices; visible light communication; LASER-DIODE; TRANSMISSION; AMPLIFIER; CHIP;
D O I：
10.1109/SUM57928.2023.10224488
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Photonic integrated circuit technology can enable new applications which are difficult to realize with discrete components. Recently, GaN-based LEDs, laser diodes, photodetectors, waveguides, modulators, and other photonic devices in visible light regime have been demonstrated. In this paper, several optical functions related to III-nitride integrated photonics technology will be discussed. Such on-chip integration will pave the path for many emerging functionalities and applications in communication, sensing etc.
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页数：2
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