Tuning the Curie temperature of a two-dimensional magnet/topological insulator heterostructure to above room temperature by epitaxial growth

被引:5
|
作者
Zhou, Wenyi [1 ]
Bishop, Alexander J. [1 ]
Zhang, Xiyue S. [2 ]
Robinson, Katherine [1 ]
Lyalin, Igor [1 ]
Li, Ziling [1 ]
Bailey-Crandell, Ryan [1 ]
Cham, Thow Min Jerald [2 ]
Cheng, Shuyu [1 ]
Luo, Yunqiu Kelly [2 ,3 ,4 ]
Ralph, Daniel C. [2 ,3 ]
Muller, David A. [2 ,3 ]
Kawakami, Roland K. [1 ]
机构
[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[2] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA
[3] Cornell Univ, Kavli Inst Cornell, Ithaca, NY 14853 USA
[4] Univ Southern Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA
基金
美国国家科学基金会;
关键词
Compendex;
D O I
10.1103/PhysRevMaterials.7.104004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature (T-C) in thin film Fe3GeTe2/Bi2Te3 from bulklike values (similar to 220 K) to above room temperature by increasing the growth temperature from 300 degrees C to 375 degrees C. For samples grown at 375 degrees C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different FemGenTe2 compositions (e.g., Fe5Ge2Te2 and Fe7Ge6Te2) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for developing various FemGenTe2/TI heterostructures with novel properties.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] 2-DIMENSIONAL MAGNET AT CURIE-TEMPERATURE - EPITAXIAL LAYERS OF CO ON CU(100) - COMMENT
    GODFRIN, H
    RUEL, RR
    OSHEROFF, DD
    PHYSICAL REVIEW LETTERS, 1992, 69 (08) : 1288 - 1288
  • [42] A Symmetry-Breaking Phase in Two-Dimensional FeTe2 with Ferromagnetism above Room Temperature
    Liu, Liang
    Chen, Songsong
    Lin, Zezhou
    Zhang, Xi
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2020, 11 (18): : 7893 - 7900
  • [43] An above-room-temperature ferroelectric two-dimensional halide double perovskite with direction dependent properties
    Rajput, Shubham Ajaykumar
    Antharjanam, Sudhadevi
    Chandiran, Aravind Kumar
    CHEMICAL COMMUNICATIONS, 2024, 60 (61) : 7898 - 7901
  • [44] ROOM-TEMPERATURE GROWTH OF TWO-DIMENSIONAL GOLD-FILMS ON GAAS(001)
    ANDERSSON, TG
    LELAY, G
    KANSKI, J
    SVENSSON, SP
    PHYSICAL REVIEW B, 1987, 36 (11): : 6231 - 6234
  • [45] Finite-temperature topological order in two-dimensional topological color codes
    Kargarian, Mehdi
    PHYSICAL REVIEW A, 2009, 80 (01):
  • [46] Room temperature terahertz emission from two-dimensional plasmons in doubly interdigitated grating gate heterostructure transistors
    Meziani, Yahya M.
    Handa, Hiroyuki
    Knap, Wojciech
    Otsuji, Taiichi
    Sano, Eiichi
    Popov, Vyacheslav V.
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 1726 - +
  • [47] Epitaxial substitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides
    Zhang, Kenan
    She, Yihong
    Cai, Xiangbin
    Zhao, Mei
    Liu, Zhenjing
    Ding, Changchun
    Zhang, Lijie
    Zhou, Wei
    Ma, Jianhua
    Liu, Hongwei
    Li, Lain-Jong
    Luo, Zhengtang
    Huang, Shaoming
    NATURE NANOTECHNOLOGY, 2023, 18 (05) : 448 - +
  • [48] Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
    S. V. Sitnikov
    S. S. Kosolobov
    A. V. Latyshev
    Semiconductors, 2017, 51 : 203 - 206
  • [49] Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
    Sitnikov, S. V.
    Kosolobov, S. S.
    Latyshev, A. V.
    SEMICONDUCTORS, 2017, 51 (02) : 203 - 206
  • [50] Epitaxial substitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides
    Kenan Zhang
    Yihong She
    Xiangbin Cai
    Mei Zhao
    Zhenjing Liu
    Changchun Ding
    Lijie Zhang
    Wei Zhou
    Jianhua Ma
    Hongwei Liu
    Lain-Jong Li
    Zhengtang Luo
    Shaoming Huang
    Nature Nanotechnology, 2023, 18 : 448 - 455