Fully Flash-Based Reservoir Computing Network With Low Power and Rich States

被引:4
|
作者
Feng, Yang [1 ]
Tang, Mingfeng [1 ]
Sun, Zhaohui [1 ]
Qi, Yueran [1 ]
Zhan, Xuepeng [1 ]
Liu, Jing [2 ]
Zhang, Junyu [3 ]
Wu, Jixuan [1 ]
Chen, Jiezhi [1 ]
机构
[1] Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao 266237, Peoples R China
[2] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China
[3] Neumem Co Ltd, Hefei 241060, Peoples R China
基金
中国国家自然科学基金;
关键词
Charge trapping; NOR flash memory; reservoir computing (RC);
D O I
10.1109/TED.2023.3295791
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A flash-based dynamic reservoir computing (RC) system is proposed. It is demonstrated that after applying a high bias voltage, the flash memory shows nonlinear transform and short-term memory properties with low current, which can be utilized as the reservoir node. Meanwhile, the cell's nonlinear characteristic determined by the stressing time can be controlled to generate rich reservoir states. Also, the low current of flash memory greatly reduces the power consumption to 0.8 pJ per input. When executing time-series prediction tasks, high accuracy is achieved with a low normalized root mean square error (NRMSE) of 0.0096. The RC system based on flash technology exhibits significant potential as a large-scale neural network with exceptionally low power consumption. Our findings suggest that flash-based RC systems could be an attractive option for neuromorphic computing applications, where energy efficiency is a critical consideration.
引用
收藏
页码:4972 / 4975
页数:4
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