Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

被引:2
|
作者
Lisker, Marco [1 ,2 ]
Mahadevaiah, Mamathamba Kalishettyhalli [1 ]
Reddy, Keerthi Dorai Swamy [1 ]
机构
[1] Int IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, Germany
[2] TH Wildau, D-15745 Wildau, Germany
来源
关键词
THIN-FILMS;
D O I
10.1116/6.0002424
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
SiN deposition at low temperatures using the plasma-enhanced atomic layer deposition (PEALD) process is gaining momentum. A high-quality SiN layer deposited using a lower thermal budget and low wet etch rates are desired for front-end-of-line applications in semiconductor industries. In this study, deposition of PEALD SiN is investigated by utilizing a highly reactive trisilylamine silicon precursor and three different reaction partners for a nitrogen precursor. The quality of PEALD SiN layers is compared with the reference standard, low-pressure chemical vapor deposition SiN layers. The properties of different SiN layers are interpreted using FTIR and XPS material characterization techniques. Furthermore, the wet etch rates of as-deposited and annealed PEALD SiN layers are investigated. Finally, the conformality of PEALD SiN layers is assessed in trench and horizontal high aspect ratio structures.
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页数:9
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