Gigahertz Acoustic Delay Lines in Lithium Niobate on Silicon Carbide With Propagation-Q of 11174

被引：10
|
作者：
Zheng, Pengcheng [1 ,2 ]
Zhang, Shibin [1 ]
Chen, Yang [1 ,2 ]
Zhang, Liping [1 ,2 ]
Wu, Jinbo [1 ,2 ]
Yao, Hulin [1 ,2 ]
Fang, Xiaoli [1 ,2 ]
Zhao, Xiaomeng [1 ]
Huang, Kai [1 ]
Ou, Xin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 02期
关键词：
Acoustic delay lines; RF signal processing; lithium niobate thin film; silicon carbide; shear horizontal surface acoustic wave (SH-SAW); propagation-Q; FILTERS; WAVES;
D O I：
10.1109/LED.2022.3233079
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work demonstrates gigahertz wideband acoustic delay lines (ADLs) with record-breaking propagation-Q using a thin-film X-cut lithium niobate on silicon carbide (LiNbO3-on-SiC) platform. Benefiting from the high bulkwave velocity and excellentmechanical fxQof SiC, the shear horizontal surface acoustic wave (SH-SAW) excited by unidirectional transducers propagates in the top-surface of LiNbO3-on-SiC with low acoustic loss. The zero power flowangle (PFA) of-3 degrees to+Y axis is obtained through simulation analysis and experiment validation, which leads to acoustic wave transmission perpendicular to the electrodes. Oriented at zero PFA, the fabricated ADLs show scalable center frequencies from1.19GHz to 2.11GHz, 3-dB fractional bandwidth ranging from 2.7% to 11.5%, and a record-high propagation-Q of 11174. The performance has shown the great potential of the LiNbO3-on-SiC acoustic platform for various signal processing applications.
引用
收藏
页码：309 / 312
页数：4
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