Implementation of a Multipath Fully Differential OTA in 0.18-μm CMOS Process

被引:7
|
作者
Akbari, Meysam [1 ]
Hussein, Safwan Mawlood [2 ]
Hashim, Yasir [2 ]
Khateb, Fabian [3 ,4 ,5 ]
Kulej, Tomasz [6 ]
Tang, Kea-Tiong [7 ]
机构
[1] Univ Kurdistan, Dept Elect Engn, Sanandaj 6617715175, Iran
[2] Tishk Int Univ, Dept Comp Engn, Fac Engn, Erbil 44001, Iraq
[3] Brno Univ Technol, Dept Microelect, Brno 60190, Czech Republic
[4] Brno Univ Def, Dept Elect Engn, Brno 66210, Czech Republic
[5] Czech Tech Univ, Fac Biomed Engn, Kladno 16636, Czech Republic
[6] Czestochowa Tech Univ, Dept Elect Engn, PL-42201 Czestochowa, Poland
[7] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
关键词
Amplifier; class-AB; CMOS; fully differential; operational transconductance amplifier (OTA); positive feedback; slew rate (SR); transconductance; RECYCLING FOLDED CASCODE; HIGH SLEW-RATE; ENHANCEMENT; AMPLIFIER; CAPACITOR;
D O I
10.1109/TVLSI.2022.3218741
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This brief implements a highly efficient fully differential transconductance amplifier, based on several input-to-output paths. Some traditional techniques, such as positive feedback, nonlinear tail current sources, and current mirror-based paths, are combined to increase the transconductance, thus leading to larger dc gain and higher gain bandwidth (GBW) product. Two flipped voltage-follower (FVF) cells are employed as variable current sources to provide class-AB operation and adaptive biasing of all other drivers. The proposed structure includes several input-to-output paths that play the role of dynamic current boosters during the slewing phase, thus improving the slew rate (SR) performance. The circuit was fabricated in a TSMC 0.18-mu m CMOS process with a silicon area of 54.5 x 30.1 mu m. Experimental results show a GBW of 173.3 MHz, a dc gain of 72.7 dB, and an SR of 139.4 V/mu s for a capacitive load of 2 x 5 pF. The proposed circuit consumes 619 mu W of power, under a supply voltage of 1.8 V.
引用
收藏
页码:147 / 151
页数:5
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