Self-Heating Influence on Hot Carrier Degradation Reliability of GAA FET by 3D KMC

被引：1
|
作者：
Zhao, Songhan [1 ,2 ]
Zhao, Pan [1 ,2 ]
He, Yandong [1 ,2 ]
Du, Gang [1 ,2 ]
机构：
[1] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
[2] Beijing Adv Innovat Ctr Integrated Circuits, Beijing, Peoples R China
来源：
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年
关键词：
self-heating; hot carrier degradation; threshold voltage degradation; temperature driving;
D O I：
10.23919/SISPAD57422.2023.10319478
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The self-heating coupling of the hot carrier degradation effect is studied in detail. The results show that self-heating has a strong activation impact on hot carrier degradation. By simulating the influence of various temperature driving forces on reliability assessment, the necessity of using temperature gradient driving forces in the evaluation and prediction process is demonstrated. The temperature gradient inside the channel causes the trapped defects to concentrate toward the drain side. The threshold voltage degradation of each channel is separated from the multi-stack GAA device, which indicates that the reliability degradation of the intermediate channel is evidently different from the overall threshold voltage drift due to severe thermal effects.
引用
收藏
页码：101 / 104
页数：4
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