In situ formation of POSS layer on the surface of polyimide film and anti-atomic oxygen of SiO2/POSS coatings

被引:6
|
作者
Xu, Hongzhu [1 ]
Cao, Xiaoxue [1 ]
Shi, Yu [2 ]
Cong, Tianxing [2 ]
Liu, Huitao [1 ]
Gao, Yuan [1 ]
机构
[1] Yantai Univ, Coll Chem & Chem Engn, Yantai, Peoples R China
[2] Valiant Co Ltd, R&D Ctr, Yantai, Peoples R China
关键词
Polyimide; POSS; SiO; 2; coating; In situ growth; Atomic oxygen; POLYHEDRAL OLIGOMERIC SILSESQUIOXANES; MOLECULAR DESIGN; NANOCOMPOSITES; COMPOSITES;
D O I
10.1016/j.porgcoat.2023.107703
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Polyhedral oligomeric silsesquioxane (POSS) nanoparticles have attracted wide attention due to their unique capability to reinforce polymers. However, if POSS cannot be uniformly dispersed in the polymer matrix, the desired properties of composites will be reduced. To solve this problem, a method of in situ formation of POSS layer on the surface of polyimide (Kapton) was explored, which not only kept the original properties of polymer unaffected, but also endowed the composites with new properties. The Kapton film completely wetted by & gamma;-aminopropyltriethoxysilane (APTES) was placed in a solution containing tetraethylammonium hydroxide (TEAOH) catalyst, and a POSS layer was gradually grown on the Kapton surface. Subsequently, SiO2 coating was deposited on the surface of POSS layer by magnetron sputtering to prepare SiO2/POSS/Kapton (SPK) samples. FTIR and XPS analyses showed that a layer with POSS structure was formed on the surface of Kapton after 6 h self-growth. Atomic oxygen irradiation test shows that the erosion rate of 6 h SPK sample is 0.19 x 10-24 cm3/ atom, only equivalent to 6.0 % of original Kapton, which improves the corrosion resistance of polymer materials.
引用
收藏
页数:9
相关论文
共 50 条
  • [31] On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface
    Han, Bo
    Zhang, Qingfan
    Wu, Jinping
    Han, Bing
    Karwacki, Eugene J.
    Derecskei, Agnes
    Xiao, Manchao
    Lei, Xinjian
    O'Neill, Mark L.
    Cheng, Hansong
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (01): : 947 - 952
  • [32] Strategies to facilitate the formation of free standing MoS2 nanolayers on SiO2 surface by atomic layer deposition: A DFT study
    Shirazi, M.
    Kessels, W. M. M.
    Bol, A. A.
    APL MATERIALS, 2018, 6 (11):
  • [33] Surface modification of Au/TiO2 catalysts by SiO2 via atomic layer deposition
    Ma, Zhen
    Brown, Suree
    Howe, Jane Y.
    Overbury, Steven H.
    Dai, Sheng
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (25): : 9448 - 9457
  • [34] Atomic layer deposition of SiO2 films on BN particles using sequential surface reactions
    Ferguson, JD
    Weimer, AW
    George, SM
    CHEMISTRY OF MATERIALS, 2000, 12 (11) : 3472 - 3480
  • [35] Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughness
    Wang, Xifeng
    Wang, Mingmei
    Biolsi, Peter
    Kushner, Mark J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (03):
  • [36] Modification of GaAs and copper surface by the formation of SiO2 aerogel film as an interlayer dielectric
    Park, SW
    Jung, SB
    Kang, MG
    Park, HH
    Kim, HC
    APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 98 - 105
  • [37] Improvement in oxidation resistance of TiB2 by formation of protective SiO2 layer on surface
    Young-Hag Koh
    Hae-Won Kim
    Hyoun-Ee Kim
    Journal of Materials Research, 2001, 16 : 132 - 137
  • [38] Improvement in oxidation resistance of TiB2 by formation of protective SiO2 layer on surface
    Koh, YH
    Kim, HW
    Kim, HE
    JOURNAL OF MATERIALS RESEARCH, 2001, 16 (01) : 132 - 137
  • [39] SiO2 film growth at low temperatures by catalyzed atomic layer deposition in a viscous flow reactor
    Du, Y
    Du, X
    George, SM
    THIN SOLID FILMS, 2005, 491 (1-2) : 43 - 53
  • [40] SiO2 thin film growth through a pure atomic layer deposition technique at room temperature
    Arl, D.
    Roge, V
    Adjeroud, N.
    Pistillo, B. R.
    Sarr, M.
    Bahlawane, N.
    Lenoble, D.
    RSC ADVANCES, 2020, 10 (31) : 18073 - 18081