In situ formation of POSS layer on the surface of polyimide film and anti-atomic oxygen of SiO2/POSS coatings

被引:6
|
作者
Xu, Hongzhu [1 ]
Cao, Xiaoxue [1 ]
Shi, Yu [2 ]
Cong, Tianxing [2 ]
Liu, Huitao [1 ]
Gao, Yuan [1 ]
机构
[1] Yantai Univ, Coll Chem & Chem Engn, Yantai, Peoples R China
[2] Valiant Co Ltd, R&D Ctr, Yantai, Peoples R China
关键词
Polyimide; POSS; SiO; 2; coating; In situ growth; Atomic oxygen; POLYHEDRAL OLIGOMERIC SILSESQUIOXANES; MOLECULAR DESIGN; NANOCOMPOSITES; COMPOSITES;
D O I
10.1016/j.porgcoat.2023.107703
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Polyhedral oligomeric silsesquioxane (POSS) nanoparticles have attracted wide attention due to their unique capability to reinforce polymers. However, if POSS cannot be uniformly dispersed in the polymer matrix, the desired properties of composites will be reduced. To solve this problem, a method of in situ formation of POSS layer on the surface of polyimide (Kapton) was explored, which not only kept the original properties of polymer unaffected, but also endowed the composites with new properties. The Kapton film completely wetted by & gamma;-aminopropyltriethoxysilane (APTES) was placed in a solution containing tetraethylammonium hydroxide (TEAOH) catalyst, and a POSS layer was gradually grown on the Kapton surface. Subsequently, SiO2 coating was deposited on the surface of POSS layer by magnetron sputtering to prepare SiO2/POSS/Kapton (SPK) samples. FTIR and XPS analyses showed that a layer with POSS structure was formed on the surface of Kapton after 6 h self-growth. Atomic oxygen irradiation test shows that the erosion rate of 6 h SPK sample is 0.19 x 10-24 cm3/ atom, only equivalent to 6.0 % of original Kapton, which improves the corrosion resistance of polymer materials.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Structural and Tribological Properties of Polyimide/Al2O3/SiO2 Composites in Atomic Oxygen Environment
    Liu, Baixing
    Pei, Xianqiang
    Wang, Qihua
    Sun, Xiaojun
    Wang, Tingmei
    JOURNAL OF MACROMOLECULAR SCIENCE PART B-PHYSICS, 2012, 51 (1-3): : 224 - 234
  • [22] Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2
    Gasvoda, Ryan J.
    van de Steeg, Alex W.
    Bhowmick, Ranadeep
    Hudson, Eric A.
    Agarwal, Sumit
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (36) : 31067 - 31075
  • [23] Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning
    Koh, Kyongbeom
    Kim, Yongjae
    Kim, Chang-Koo
    Chae, Heeyeop
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (01):
  • [24] Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition
    Tsutsumi, Takayoshi
    Kondo, Hiroki
    Hori, Masaru
    Zaitsu, Masaru
    Kobayashi, Akiko
    Nozawa, Toshihisa
    Kobayashi, Nobuyoshi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (01):
  • [25] Ultraviolet laser damage properties of single-layer SiO2 film grown by atomic layer deposition
    Geng, Feng
    Cheng, Haipeng
    Zhang, Qinghua
    Liu, Mincai
    Li, Yaguo
    OPTICAL MATERIALS EXPRESS, 2020, 10 (08): : 1981 - 1990
  • [26] Improvement in oxidation resistance of carbon by formation of a protective SiO2 layer on the surface
    Koh, YH
    Kwon, OS
    Hong, SH
    Kim, HE
    Lee, SK
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (13) : 2407 - 2412
  • [27] Temperature dependence of SiO2 film growth with plasma-enhanced atomic layer deposition
    Kobayashi, Akiko
    Tsuji, Naoto
    Fukazawa, Atsuki
    Kobayashi, Nobuyoshi
    THIN SOLID FILMS, 2012, 520 (11) : 3994 - 3998
  • [28] Quantum chemical study of the initial surface reactions in atomic layer deposition of TiN on the SiO2 surface
    Lu, Hong-Liang
    Chen, Wei
    Ding, Shi-Jin
    Xu, Min
    Zhang, David Wei
    Wang, Li-Kang
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (26) : 5937 - 5944
  • [29] SIO2 BURIED LAYER FORMATION BY SUBCRITICAL DOSE OXYGEN ION-IMPLANTATION
    STOEMENOS, J
    MARGAIL, J
    JAUSSAUD, C
    DUPUY, M
    BRUEL, M
    APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1470 - 1472
  • [30] Atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
    Pfeiffer, Kristin
    Shestaeva, Svetlana
    Bingel, Astrid
    Munzert, Peter
    Schulz, Ulrike
    Kaiser, Norbert
    Tuennermann, Andreas
    Szeghalmi, Adriana
    OPTICAL SYSTEMS DESIGN 2015: ADVANCES IN OPTICAL THIN FILMS V, 2015, 9627