Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation

被引：1

作者：

Cai, Guangshuo ^{[1
]}

Mu, Caoyuan ^{[2
]}

Li, Jiaosheng ^{[1
]}

Li, Liuan ^{[2
]}

Cheng, Shaoheng ^{[2
]}

Wang, Qiliang ^{[2
]}

Han, Xiaobiao ^{[3
]}

机构：

[1] Guangdong Polytech Normal Univ, Sch Optoelect Engn, Guangzhou 510665, Peoples R China

[2] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[3] Anhui Univ, Ind Educ Res Inst Adv Mat & Technol Integrated Cir, Hefei 230093, Peoples R China

来源：

MICROMACHINES | 2023年 / 14卷 / 09期

关键词：

diamond; p-n junction diode; junction terminal extension; simulation; LOW ON-RESISTANCE; BREAKDOWN VOLTAGE;

D O I：

10.3390/mi14091667

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the step edge termination. After optimizing the structure parameters of the device, the depletion regions formed by the junction termination extension overlap with that of the p-n junction on the top mesa, resulting in a more uniform electric field distribution and higher device performance.

引用

页数：13

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