New Method for Improving the Electrical Characteristics of P-N Junction Diode

被引：0
|
作者：
Srithanachai, Itsara [1 ]
Ueamanapong, Surada [1 ]
Poyai, Amporn [2 ]
Niemcharoen, Surasak [1 ]
机构：
[1] King Mongkuts Inst Technol, Fac Engn, Dept Elect, Bangkok 10520, Thailand
[2] Thai Microelect Ctr TMEC, Chachoengsao 24000, Thailand
来源：
APPLIED MATERIALS AND ELECTRONICS ENGINEERING, PTS 1-2 | 2012年 / 378-379卷
关键词：
Soft X-ray annealing; series resistance; silicon bulk; DOSIMETER;
D O I：
10.4028/www.scientific.net/AMR.378-379.606
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.
引用
收藏
页码：606 / +
页数：2
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