Transition from Schottky to ohmic contacts in the C31 and MoS2 van der Waals heterostructure

被引：2

作者：

Xu, Lijun ^{[1
,2
]}

Zhan, Guohui ^{[1
,2
]}

Luo, Kun ^{[1
,2
]}

Lu, Fei ^{[3
]}

Zhang, Shengli ^{[4
]}

Wu, Zhenhua ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100029, Peoples R China

[3] Southeast Univ, Sch Integrated Circuits, Nanjing 210094, Peoples R China

[4] Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2023年 / 25卷 / 29期

基金：

中国国家自然科学基金;

关键词：

TRANSISTORS; GRAPHENE; STRAIN;

D O I：

10.1039/d3cp02357e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The utilization of conventional metal contacts has restricted the industrial implementation of two-dimensional channel materials. To address this issue, we conducted first-principles calculations to investigate the interface properties of C-31 and MoS2 contacts. An ohmic contact and a low van der Waals barrier were found in the C-31/MoS2 heterostructure. Our findings provide a promising new contact metal material for two-dimensional nanodevices based on MoS2.

引用

页码：20128 / 20133

页数：6

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