Transition from Schottky to ohmic contacts in the C31 and MoS2 van der Waals heterostructure

被引：2
|
作者：
Xu, Lijun [1 ,2 ]
Zhan, Guohui [1 ,2 ]
Luo, Kun [1 ,2 ]
Lu, Fei [3 ]
Zhang, Shengli [4 ]
Wu, Zhenhua [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100029, Peoples R China
[3] Southeast Univ, Sch Integrated Circuits, Nanjing 210094, Peoples R China
[4] Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Peoples R China
来源：
PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2023年 / 25卷 / 29期
基金：
中国国家自然科学基金;
关键词：
TRANSISTORS; GRAPHENE; STRAIN;
D O I：
10.1039/d3cp02357e
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The utilization of conventional metal contacts has restricted the industrial implementation of two-dimensional channel materials. To address this issue, we conducted first-principles calculations to investigate the interface properties of C-31 and MoS2 contacts. An ohmic contact and a low van der Waals barrier were found in the C-31/MoS2 heterostructure. Our findings provide a promising new contact metal material for two-dimensional nanodevices based on MoS2.
引用
收藏
页码：20128 / 20133
页数：6
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